conduction band

Electrical Test and Evaluation on the Conduction Band Defects of Hybrid Integrated Circuits

HIC导带缺陷的电学检测与评估

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The minimum of the conduction band is found at Γ 1 point.

得出了价带位置和能隙宽度，导带的最小点在Γ1。

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Due to the quantum effects, the first subband is higher than the conduction band edge.

由于量子束缚效应的存在，第一个子带高于导带底，因此源漏端的势垒高度提高，载流子密度降低，漏电流降低。

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Photovoltaic studies on the conduction band discontinuity of ZnSe/ GaAs heterojunctions

光生电压谱方法对Znse/GaAs异质结导带偏移的研究

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Carriers are transported in the conduction band of the semiconductor to the charge collector.

承运人运输的半导体的导带电荷收集。

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In band structures, one band that is empty with electrons is termed conduction band.

在能带结构中, 未填充电子的带称为导带.

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We explain these phenomena by the space charge limited current and the electronic transition between the X and Γ valleys of the conduction band.

利用空间电荷限制电流和能谷间的电子跃迁解释了上述实验现象。

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The hybridization of conduction band is studied for close-packed compounds by means of LMTO method.

用LMTO能带论方法分析了密堆结构复式格子的导带中角动量杂化情况变化的规律。

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The valence band maximum is a flat band; whereas the conduction band minimum is a parabolic band.

能带中价带顶是一条平坦的能带，而导带底为具有抛物线形状的能带。

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The band gap between π band and π~ band, as well as the trap energy decreases with increasing C-C concentration, leading to increase of leakage current due to field-enhanced thermal excitation of trapped electrons into the conduction band.

随着C-C含量的增大，π价带态和π导带态之间的带隙减小，电荷陷阱深度减小，陷阱中的电子在场增强热激发作用下更容易进入导带，导致薄膜漏电流增加。

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The characteristics of conduction band and forbidden band of photonic crystals are investigated with a macroscopical chord vibrating system indirectly.

得到了类比于光子晶体的亥姆霍兹方程的弦振动系统的本征值方程，并利用该方程研究了光子晶体的导带和禁带特征。

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Most optical oscillator strengths for the transitions between valence band and conduction band are nearly equal to zero.

价带顶和导带底附近的带间跃迁振子强度大部分都近乎为零；

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The characters of the highest valence states and lowest conduction band are the key characteristics of the band structure responsible for its optical-electrical properties.

能带结构中的价带顶和导带底对光电性能有重要影响。

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The reason was found to be the nitro group cannot efficiently inject the electrons to the conduction band of TiO2.

对于产生这种现象的原因，我们进行了深入的研究，发现是硝基结构不能有效的将电子注入到Ti02半导体的导带。

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The model includes the production of conduction band electrons ( CBE), laser energy deposition and CBE diffusion.

研究了导带电子的扩散对材料中激光能量的沉积、分布、破坏阈值和烧蚀深度的影响。

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Finally the variety of the density of conduction band electrons in the ablation process is discussed and the experimental result with avalanche mode is interpreted.

讨论了飞秒激光照射下LiF晶体中导带电子数密度的变化规律，并解释了相应的实验结果。

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The trap energy of the traps at band tails formed by the delocalized π electrons decreases after annealing, leading to the increase of leakage current due to field-enhanced thermal excitation of trapped electrons into the conduction band.

非定域π电子在带尾形成陷阱且陷阱能量在退火后降低，从而使更多陷阱电子在场增强热激发作用下进入导带并引起电流增大。

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The valance band and conduction band can be described very well by our calculated results as well.

同时，计算的结果也能对价带和导带进行很好的描述。

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However doping has no obvious effect on the conduction band tail.

重掺杂还加宽了价带带尾。

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Al Conduction Band in Thin Film HIC

铝导带薄膜混合集成电路工艺

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The electronic structure of conduction band near Fermi level is changed markedly, especially for Ni.

费米面附近导带的电子结构变化较大；

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These surface electrons can neither move freely through vacuum nor through conduction band of the metal, otherwise different crystal faces would not have different work functions.

这些电子既不能进入真空，也不能在金属导带中自由运动，否则不同晶面便不可能有不同的逸出功。

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Empty Spheres Effect on the Structure of Conduction Band of Alkaline-Earth Sulphide SrS

空原子球对SrS导带结构的影响

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Photon absorption of conduction band electrons in fused silica

石英玻璃中导带电子的光吸收

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The empty spaces in the conduction band are at too high an energy level to be of use.

导带里的空间则由于能量太高而无法利用。

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Effective masses at the top of valence band and at the bottom of conduction band were deduced from band structure.

价带顶和导带底的有效质量从计算得到的能带结构中求出。

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Conduction band structure of K 3C 60 single crystal films was studied at temperatures near 200 K.

研究了K3C60单晶薄膜在200K附近的导带结构。

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Effective mass of electrons in conduction band of hg_ ( 1-x) cd_x te semiconductors

Hg（1-x）Cd xTe半导体的导带电子有效质量

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The results indicate that HCHO has a strong influence on the anodic behavior of both p-Si and n-Si electrodes in alkaline solutions. A reduction current of HCHO on an n-Si ( 100) electrode was observed in the dark due to the conduction band electron.

实验结果表明，甲醛不仅影响p和n型半导体电极在碱性溶液中的阳极氧化峰电流，而且在负电位区能在Si（100）电极上发生还原。

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The highest-energy band containing electrons is called the valence band, and the next higher one is the conduction band.

填有电子而能量最高的能带称为价带，相邻的更高能带称为导带。

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